About Opportunity:

Researchers at the Institute of Photonics and Department of Physics at the University of Strathclyde have developed a patented technology of benefit to the semiconductor industry. This technology relates to gallium nitride (GaN) semiconductor devices which are most familiar as high brightness blue and green LEDs. The Strathclyde team has established a strong track-record in nitride semiconductor growth research at an international level, and has proprietary know-how and the basis of a sound portfolio of related IP.

The new technology is an aluminium indium gallium nitride layer which provides a means to optically monitor, in situ, the growth of GaN devices on newly developed GaN substrates. This layer provides a contrast in refractive index which allows optical monitoring of the growth. This non-pertubative monitoring allows the layer thickness to be controlled with great accuracy. For all devices this avoids wasted materials and minimizes costly processing time. For many devices this will allow optimum performance and increases production yield.