Silicon Carbide Bonding - high integrity structural joining of parts

This University of Glasgow patent provides a method for bonding at least two parts at least one part comprising silicon carbide by:
a) forming a layer of silica on the silicon carbide surface to provide a bonding surface
b) applying a bonding solution including hydroxide ions to the bonding surface of at least one of the parts
c) positioning the parts or the bonding surfaces so that a bond can be formed between them.

Patent claims extend to assemblies obtained or obtainable by this method. The patent covers a device or assembly comprising silicon carbide bonded to another part by an interface material that comprises silica treated with a solution, preferably an aqueous solution, which includes hydroxide ions.

Moreover, the claims extend to a device or assembly comprising
silicon carbide bonded to another part by an interface material that comprises a siloxane network.

Key Benefits

For precision construction, hydroxide bonding offers many advantages over traditional techniques.
Bonding is achieved at room temperature avoiding any thermal stresses.
The bond is very stable and vanishingly thin, which is a major benefit for applications where the 'vertical alignment' can be achieved by manufacturing tolerances of the components in combination with the very thin, uniform bond layer.
Hydroxide bonds are compatible with high vacuum applications, offer reliable and reproducible bonds and allow for fine adjustment of components before joining.

Applications

High precision alignment and bonding of SiC components for ground- and space-based applications.
High strength, low mechanical loss joining of SiC parts
semiconductors
astronomical instruments

IP Status

Family list 3 application(s) for: EP1737802 (A1)
1 SILICON CARBIDE BONDING
EC: IPC: C04B35/565; C04B37/00; C04B35/565; (+1)
Publication info: EP1737802 (A1) - 2007-01-03

2 Silicon Carbide Bonding
EC: IPC: C04B35/565; C04B37/00; C04B35/565; (+1)
Publication info: US2007221326 (A1) - 2007-09-27

3 SILICON CARBIDE BONDING
EC: IPC: C04B35/565; C04B37/00; C04B35/565; (+3)
Publication info: WO2005097709 (A1) - 2005-10-20

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